Ftd02p Datasheet May 2026

The FTD02P is most commonly found in the package. The standard pinout is: Gate (G): Controls the state of the MOSFET.

): The voltage at which the device begins to conduct. Usually between . Drain-Source On-Resistance (

V(BR)DSScap V sub open paren cap B cap R close paren cap D cap S cap S end-sub Ftd02p Datasheet

Understanding the FTD02P: A Comprehensive Datasheet Guide The is a specialized electronic component, typically categorized as a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) . It is widely used in power management, switching circuits, and battery-operated devices due to its efficiency and compact form factor.

could potentially spike above ±12V, consider using a Zener diode to protect the gate oxide from rupture. Conclusion The FTD02P is most commonly found in the package

Suitable for PWM (Pulse Width Modulation) applications. Common Applications: Load switches in portable devices (phones, tablets). DC-DC converters. Power management in battery-operated systems. High-side switching. 2. Absolute Maximum Ratings

RDS(on)cap R sub cap D cap S open paren o n close paren end-sub ): Approx. at Approx. 110-150 mΩ at Dynamic Characteristics Total Gate Charge ( Qgcap Q sub g Usually between

Exceeding these values can cause permanent damage to the device. Engineers should always design with a safety margin (typically 20% below these limits). Drain-Source Voltage VDScap V sub cap D cap S end-sub -20 to -30 Gate-Source Voltage VGScap V sub cap G cap S end-sub Continuous Drain Current IDcap I sub cap D -2.0 to -4.0 Pulsed Drain Current IDMcap I sub cap D cap M end-sub Power Dissipation ( PDcap P sub cap D Operating Junction Temp TJcap T sub cap J -55 to +150